Electrical, mechanical and environmental tests were carried out for the characterization and verification of the manufactured BEMs. Their manufacturing development has included elegant breadboard prototypes and finally qualification and flight model units. The BEM design is based on MMIC Low Noise Amplifiers using GaAs P-HEMT devices, microstrip filters and Schottky diode detectors. Each receiver has two identical branches following the differential scheme of the Planck radiometers. The signals coming from the Front End Module are amplified, band pass filtered and finally converted to DC by a detector diode. The 30 and 44 GHz Back End Modules (BEM) for the Planck Low Frequency Instrument are broadband receivers (20% relative bandwidth) working at room temperature. The layout obtained shows the concept of high and low impedance Low Pass filter also known as stepped impedance techniques. Also layout of Low Pass filter is obtained. The simulated results show that the cut-off frequency obtained is 3.04 GHz which is slightly greater than 2.8 GHz. Low-pass filter is implemented by microstrip lines using sections of varying characteristics impedance lines. The filter designed using stepped-impedance is also known as Hi-Z or Low-Z filters. The simulation result carried out reveal that they are in complete agreement with the design specifications The main types of distributed filters used today are combline, interdigital, parallelcoupled- line bandpass and bandstop, and stepped-impedance filters. Design and simulation of Microstrip coupled line band-pass filter is done at 2.40 GHz operating frequency, with 5th order Chebyshev 0.5 dB ripple and 200 MHz of bandwidth using ADS simulation software. The simulated results obtained are sufficient enough so that it can be used for different wireless applications. The entire simulation is carried out using the ADS tool. The second stage is a power stage to improve broadband gain along with power. Therefore it can be called as a totem pole technique circuit. The proposed LNA consists of two stages, first is acting as a pull down amplifier as its drain is pull down using an LC cascade circuit which helps improving noise figure as well as broadband matching. A novel design is proposed here where a unique technique is applied to the LNA. Transistor M1 is biased with drain voltage of 0.98V with gate biased at -0.1V and provides a sufficient current to drive transistor M2. First stage transistor is driving second stage along with total current. The first stage is optimized for noise matching and the resistive shunt-feedback stage provides wideband gain and good stability. The LNA is designed by using 0.15μm GaAs pHEMT process. This project proposes the wideband LNA with analyses on the key performance factors required for UWB LNA design, such as noise performance, and linearity over a wide bandwidth. In general, I know that the signal transmitted by the antenna is an AC signal.The aims of this project are to design and implement Low Noise Amplifier in the Ultra Wide Band frequency, Realization of Microstrip Band Pass Filter Design and Realization of Low Pass Filter using stepped impedance technique. What does it mean to allow DC current to pass through the antenna? I have seen in the document "AN1275: Impedance Matching Network Architectures" by Silabs that the high-pass network allows high frequencies to pass through the antenna and the low-pass pi-network blocks the passage of high frequencies through the antenna, which also means that the matching network must allow DC current to pass through the antenna. Can someone tell me when to choose the pi-network high pass or low pass for antenna matching? I chose pi-network because it is selective and allows to set the quality factor Q of the circuit and the bandwidth (BW) of the antenna as Q=F/BW. I want to use a pi-network for the tuning process. I have a PCB trace antenna, I need to tune it to 2.45GHz, this is for Bluetooth low energy communication. I am a beginner in RF system design and I have some questions.
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